Концентрация донорной примеси составляет Nд атом/см3, акцепторной примеси – Nа атом/см3 (таблица 2.1), собственная концентрация носителей в полупроводнике - ni. Найти контактную разность потенциалов для р-n перехода при заданной температуре Т (таблица 2.2).

Translation (Russian):

The concentration of donor impurity is D atom/cm3, the acceptance impurity is Noa atom/cm3 (table 2.1), the own concentration of media in the semiconductor is ni. Find a contact difference of potentials for p-n transition at a given temperature T (table 2.2).

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