Carrier concentration for n type

Consider an n-type silicon semiconductor at T = 300°K in which Nd = 1016 cm-3 and Na = 0. The intrinsic carrier concentration is assumed to be ni = 1.5 x 1010 cm-3. - Comment Nd >> ni, so that the thermal-equilibrium majority carrier electron concentration is essentially equal to the donor impurity concentration.

Explanation:

6/12=1/2

step-by-step explanation:

gpe = mass x gravity constant x height or… gpe = mgh

where… mass: measured in kilograms (kg)

gravity: gravity constant on earth = 10.00 m/s2

height: measured in meters (m)

gpe: measured in joules (j) or kilojoules (kj)

how do you solve gpe?

gravitational potential energy (gpe) is the energy an object has because of its position above the. ground.

gpe = mass x gravity constant x height or… gpe = mgh.

mass:

note: to earn full marks when solving science word problems, you must show your work:

formula.

example:

given values:

mass = 0.3 kg.