In a uniform p-type si sample, as is diffused to have a donor profile of 10^18/cm^3, problems where acceptor concentration becomes negligible in comparison of donor concentration. find the resulting value of the sheet resistance of the diffused layer up to the junction depth of 5 μm of the device. if the mobility for electrons is μn = 500 cm^2/ v-sec, then what will be the value for the conductivity?
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In a uniform p-type si sample, as is diffused to have a donor profile of 10^18/cm^3, problems where...
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