Each circuit is driven at its resonance frequency by a 100 vrms ac power supply. rank these circuits on the basis of their maximum current.

1.r=1000 ω
c=0.5μf
l=2.0h
2.r=4000 ω
c=4.0μf
l=1.0h

3.r=500 ω
c=1.0μf
l=1.5h

4.r=1000 ω
c=1.0μf
l=1.0h

5.r=500 ω
c=4.0μf
l=1.0h

6.r=2000 ω
c=2.0μf
l=0.5h

Consider the growth of a 20-nm-diameter silicon nanowire onto a silicon wafer. the temperature of the wafer surface is maintained at 2400 k. assume the thermal conductivity of the silicon nanowire is 20 wm-1k-1 and all its surfaces including the tip are subjected to convection heat transfer with the coefficient h = 1×105 wm-2k-1 and t∞ = 8000 k. when the nanowire grows to l = 300 nm, what is the temperature of the nanowire tip (t (x =