In an ideal semiconductor with equal effective masses of electron and holes, intrinsic energy level (ej should be in the middle of bandgap and the maximum electron and hole concentrations for which the material remains nondegenerate are equal. however, in real semiconductors effective masses of density of states in c. b. and v. b., me* and mi*, are not equal, which results in the ei being off the midgap for a new discovered semiconductor (hypothetical) with eg-2.0 ev at 300 k, and me 2.0mo and mh 0.002mo

(a) calculate separately the maximum donor and acceptor concentrations for which the semiconductor will remain nondegenerate at 300 k.

(b) determine the exact positions of the fermi level in intrinsic material, e, (see the lecture notes for the calculation in si)

(c) calculate intrinsic carrier concentration ni

(d) draw the band diagram in equilibrium for the intrinsic material and quantify (compute) the position of e, w. r.t. ec and ev repeat the calculations through a) to d) for inp, eg-0.17 ev at 300 k, and 0.014mo and mh = 0.43m0 compare the results. what did you mention? to receive the full credit, discuss the effect of relative values of me and mi on the location of the fermi level and donor and acceptor concentrations for which the semiconductor will remain nondegenerate