Given an n-channel mosfet with: z/l-20, p-500 cm2/v-s oxide thickness 10 nm; relative dielectric constant of oxide-5: p+ poly si gate electrode: body doping of 2e17/cm3 qt-+2e11/cm2. cålculate the thresholdôoltage. assume that the fermi level in the gate is coincident with the valence band. be neat-show your results in a tabular form. a) we assume that the drain-source current is zero until threshold. is this true? what is the approximate functional relationship between current and gate voltage prior to threshold-explain using an appropriate y direction band diagram