Asilicon pn junction diode is constructed using n-type silicon in which the fermi level is 170 mev below the conduction band edge and p-type silicon in which the fermi level is 150 mev above the valence band edge.
what are the majority and minority carrier concentrations on each side of the junction under thermal equilibrium? (8 points)
what is the value of the built-in voltage? (3 points)
determine the width of the depletion region on both sides of the junction at zero bias. (6 points)
what is the peak electric field in the depletion region at zero bias? where does it occur? (4 points)
sketch the electric field in the space charge region as a function of x. annotate wherever possible (4 points)
when a reverse bias is applied to a diode, the electric field sweeps minority carriers across the junction. what reverse voltage must be applied to the diode to reduce the concentration of minority carriers at the edge of the depletion region by a factor of ten? (3 points extra credit)

In the future, people will only enjoy one sport: electrodisc. in this sport, you gain points when you cause metallic discs hovering on a field to exchange charge. you are an electrodisc player playing the popular four disc variant. the disks have charges of qa = −8.0 µc, qb = −2.0 µc, qc = +5.0 µc, and qd = +12.0 µc. (1) you bring two disks together and then separate them. you measure the resulting charge of these two disks and find that it is +5.0 µc per disk. which two disks did you bring together? (a) a and b (b) a and c (c)a and d (d)b and c(e) b and d (f) c and d. (2) you bring three disks together and then separate them. you measure the resulting charge of these three disks and find that it is +3.0 µc per disk. which three disks did you bring together? a, b, and c (a) a, b, and d (c) a, c, and d (d) b, c, and d. (3) given the resulting charge of each disk measured in (b) is +3.0 µc, how many electrons would you need to add to a disk of this charge to electrically neutralize it? electrons