Apiece of silicon sample has a resistivity of 0.1 ω.cm. its thickness is 100µm. the electron mobility is 1350cm 2 v -1sec-1. when a magnetic field of bz and an ix of 1ma is supplied, the hall voltage is found out to be -70µv. calculate the electron concentration (#/cm3 or #/m3 ) of the silicon sample and bz (in wb/m2 ). suppose the concentration of holes can be neglected.

The answer is Rh = 135 cm^3 and B = 0.05185 wh/m^2

Explanation:

Resitivity of silicon = 0.1

thickness = 100um

so, I = ma

Required to find out concentration of electron , we know that

Rh = up

By putting in the values,

Rh = 1350 x 0.1

Rh = 135 cm^3

Now consider,

Rh = 1 / Rh.q

= 1 / Rh . q

= 1 / 135 x1.609 x10^-19

= 4.6037 x 10^16 / cm^3

Vh = BIRh / w

B = Vh w/ IRh

B = -70 x10^-6 x 100 x10^-6 / 1x 10^-3 x 135 x 10^-6

B = 0.05185 wh / m^2

i would think klcio3

the working equation for the angular size is the product of the physical size and 360 degrees divided by the product of two pi and distance from earth. the minimum size would be 0.559 degrees while the maximum size would be 0.49 degrees.