g For the Boltzmann approximation to be valid for a semiconductor, the Fermi level must be at least 3 kT below the donor level in an n-type material and at least 3 kT above the acceptor level in a p-type material. If T 300 K, determine the maximum electron concentration in an n-type semiconductor and the maximum hole concentration in a p-type semiconductor for the Boltzmann approximation to be valid in