The electron concentration in silicon at T = 300 K is given by n(x) = 10^16exp(-x/18) cm^-3
where x is measured in μm and is limited to 0 ≤ x ≤ 25 μm. The electron diffusion coefficient is Dn = 25 cm2/s and the electron mobility is μn = 960 cm2/V-s. The total electron current density through the semiconductor is constant and equal to Jn = -40 A/cm2. The electron current has both diffusion and drift current components. Determine the electric field as a function of x which must exist in the semiconductor.

Apump is used to circulate hot water in a home heating system. water enters the well-insulated pump operating at steady state at a rate of 0.42 gal/min. the inlet pressure and temperature are 14.7 lbf/in.2, and 180°f, respectively; at the exit the pressure is 60 lbf/in.2 the pump requires 1/15 hp of power input. water can be modeled as an incompressible substance with constant density of 60.58 lb/ft3 and constant specific heat of 1 btu/lb or. neglecting kinetic and potential energy effects, determine the temperature change, in °r, as the water flows through the pump.

Acompressor receives the shaft work to decrease the pressure of the fluid. a)- true b)- false

What are the major differences between injection molding and extrusion?