Engineering, 14.06.2020 01:57 Demondevilg
1) We want to design a heterojunction InP / InGaAsP / InGaAs LED for 1.3 m emission with an area A = 0.01 mm2 and an output optical power Pout = 10 mW. The maximum injected charge density in the active InGaAsP layer is n = 5 x 1017 cm-3 . The effective refractive index of the heterostructure is 3.5 and the refractive index of the encapsulation material is 1.5. Evaluate the thickness of the active region assuming the radiative lifetime is 3 ns and external quantum efficiency is 40%. (You can assume that the extraction is only affected by the reflection losses, therefore extraction efficiency can be assumed to be equal to (1- Reflectance). To simplify the calculations, you can assume that the photons are only hitting the boundaries at normal incidence)
Answers: 3
Engineering, 03.07.2019 15:10
If you were designing a bumper for a car, would you prefer it to exhibit elastic or plastic deformation? why? consider the functions of a bumper in both a minor "fender-bender" and a major collision.
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Engineering, 04.07.2019 18:10
The higher the astm grain-size number, the coarser the grain is. a)-true b)-false
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Engineering, 04.07.2019 18:10
Consider a large isothermal enclosure that is maintained at a uniform temperature of 2000 k. calculate the emissive power of the radiation that emerges from a small aperture on the enclosure surface. what is the wavelength ? , below which 10% of the emission is concentrated? what is the wavelength ? 2 above which 10% of the emission is concentrated? determine the wavelength at which maximum spectral emissive power occurs. what is the irradiation incident on a small object placed inside the enclosure?
Answers: 2
Engineering, 04.07.2019 18:10
Assuming compressible flow of air and that the measurements are done at flagstaff a pitot static tube that gives the difference of total and static pressure measures 0.35 m of mercury. what is the velocity of air? assume the temperature to be 300k. (submit your excel or matlab calculation sheet)
Answers: 1
1) We want to design a heterojunction InP / InGaAsP / InGaAs LED for 1.3 m emission with an area A...
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