An article in the Journal of the Electrochemical Society (Vol. 139, No. 2, 1992, pp. 524-532) describes an experiment to investigate the low-pressure vapor deposition of polysilicon. The experiment was carried out in a large-capacity reactor at Sematech in Austin, Texas. The reactor has several wafer positions, and four of these positions are selected at random. The response variable is film thickness uniformity. Three replicates of the experiment were run, and the data are as follows: Wafer Position Uniformity 1 2.76 5.67 4.49 2 1.43 1.70 2.19 3 2.34 1.97 1.47 4 0.94 1.36 1.65 (a) Is there a difference in the wafer positions