(a) Sketch the inversion layer and depletion region inside the MOSFET corresponding to point (1) on the pictured characteristic. Show and label all parts of the transistor. (b) Given a turn-on voltage of VT=1 V, what is the gate voltage one must apply to the MOSFET gate to obtain the pictured characteristic? (c) If the oxide thickness xo= 0.1 µm, what is the inversion-layer charge/cm2 at the drain end of the channel when the MOSFET is biased at point (2) on the characteristic? (d) Suppose the gate voltage is readjusted so that VG-VT=3 V. For the new condition, determine ID if VD=4 V.