If we have silicon at 300K with 10 microns of p-type doping of 6.1*10^18/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the n-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 78 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively.