If we have silicon at 300K with 10 microns of p-type doping of 4.48*10^18/cc and 10 microns of n-type doping at 1000 times less than the p-type doping, what is the resistance in ohms outside the depletion region on the n side of the junction. Use three significant digits and fixed point notation. The diode is square with an edge length of 60 microns, with a bias of 0.44V. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. Correct 24.9

The resistance is 24.9 Ω

Explanation:

The resistivity is equal to:

The area is:

A = 60 * 60 = 3600 um² = 0.36x10⁻⁴cm²

If NA is greater, then, the term 1/NA can be neglected, thus the equation:

Where

V = 0.44 V

E = 11.68*8.85x10¹⁴ f/cm

The length is:

L = 10 - 0.335 = 9.665 um

The resistance is:

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