Engineering, 17.03.2020 21:19 mariah9695
Electron-Hole Pair Injection in GaAs. Assume that electron-hole pairs are injected into n type GaAs (Eg = 1.42 eV, me ~ 0.07 mo, mu 0.50 rno) at a rate R = 1023/cms_s. The thermal 10-11 cm2/s and T 300° K, determine: (a) The equilibrium concentration of holes po (b) The recombination lifetime τ (c) The steady-state excess concentration Δn. (d) The separation between the quasi-Fermi levels Efe-Efv, assuming that T = 00 K.
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Electron-Hole Pair Injection in GaAs. Assume that electron-hole pairs are injected into n type GaAs...
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