Engineering, 11.03.2020 05:27 sheyunicorn

Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel length modulation parameter). Which of the following best describes the behavior of this transistor?a. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the triode region. A value of VDS=12 V would not result in a higher IDS current. b. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in higher IDS current. c. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in a higher IDS current due to channel-length modulation. d. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would not result in a higher IDS current.

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Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel...

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