The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained?

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The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained? "

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