Engineering, 06.03.2020 22:00 brittsterrr

An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The doping concentrations are NE 1018 cm3 , NB 1017 cm3 , and NC 1016 cm3 . Other parameters are xB 1 m, E0 B0 C0 2 107 s, DE 10 cm2 /s, DB 20 cm2 /s, DC 15 cm2 /s, and A 103 cm2 . (a) Calculate and plot the minority carrier distribution in the device. (b) Calculate the collector and emitter currents. (Neglect geometry factors and assume the recombination factor is unity.)

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An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The dopin...

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