Calculate tunneling probability through 1 nm SiO2 gate insulator and 3 nm HfO2 gate insulator of an field-effect transistor. Energy barriers of penetration of electron through and are 8 and 6 eV respectively. Calculate tunneling leakage current through the gates of an area of 0.1 mm2 .

At steady state, air at 200 kpa, 325 k, and mass flow rate of 0.5 kg/s enters an insulated duct having differing inlet and exit cross-sectional areas. the inlet cross-sectional area is 6 cm2. at the duct exit, the pressure of the air is 100 kpa and the velocity is 250 m/s. neglecting potential energy effects and modeling air as an 1.008 kj/kg k, determine ideal gas with constant cp = (a) the velocity of the air at the inlet, in m/s. (b) the temperature of the air at the exit, in k. (c) the exit cross-sectional area, in cm2