Engineering, 28.11.2019 00:31 ashleyivers3

(a)calculate the threshold voltage for a n channel si mosfet. thickness of oxide=20nm. relative dielectric constant of oxide=3.9. doping in p body=1e17/cm3. work function of the metal= 4.8 ev. electron affinity of si=4.0 ev. qit=0. eg=1.12 ev.(b) draw y direction thermal equilibrium and normal operating conditions diagrams ( 2 separate diagrams) for the above mosfet.(c)repeat #a for a p channel mosfet. now assume that the work function of the metal is 4.3 ev. doping in n body is 1e17/cm3.(d)repeat #b for the problem whose parameters are specified in #c.(e )repeat #a if the metal gate electrode is replaced by p+ poly si. only one term changes from the solution for #a.

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(a)calculate the threshold voltage for a n channel si mosfet. thickness of oxide=20nm. relative diel...

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