Engineering, 27.11.2019 22:31 o11011195
Consider a non-ideal (e. g. a realistic junction with fermi level pinning) tungsten schottky barrier on silicon having a constant donor density the junction will be a low-resistance ohmic contact that can pass high currents by tunneling if the barrier presented to the electrons is thin enough. we assume that the onset of efficient tunneling occurs when the fermi level extrapolated from the metal meets the edge of the conduction band at a distance no larger than 9 nm from the interface.(a) what is the minimum nd such that this condition would be met at equilibrium? (b) draw a sketch of the energy band diagram under the condition of (a). (c) assume that nd is increased four times from (a). by what factor is the tunneling distance (wdep) reduced? and by what factor is re reduced?
Answers: 1
Engineering, 03.07.2019 14:10
If the thermal strain developed in polyimide film during deposition is given as 0.0044. assume room temperature is kept at 17.3 c, and thermal coefficient of expansion for the film and the substrate are 54 x 10^-6c^-1 and 3.3 x 10^-6c^-1respectively. calculate the deposition temperature.
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Engineering, 03.07.2019 23:20
Two technicians are discussing the intake air temperature (iat) sensor. technician a says that the computer uses the iat sensor as a backup to the engine coolant temperature (ect) sensor. technician b says that the powertrain control module (pcm) will subtract the calculated amount of fuel if the air measures hot. who is correct
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Engineering, 04.07.2019 16:10
The force on a cutting tool are 2600n vertically downward and 2100 horizontal. determine the resultant force acting on the tool and the angle at which it acts.
Answers: 1
Engineering, 04.07.2019 18:10
Draw the engineering stress-strain curve for (a) bcc; (b) fcc metals and mark important points.
Answers: 1
Consider a non-ideal (e. g. a realistic junction with fermi level pinning) tungsten schottky barrier...
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