Asilicon dioxide film formed on the surface of a silicon wafer by thermal oxidation has a thickness that is
(a) greater than, (b) less than, or (c) the same as the layer of substrate silicon used to form it.

less thickness

Explanation:

Thermal oxidation is a process where only the surface atoms react and are converted into the silicon dioxide, so unless you have a layer of silicon wafer of a one atom thickness, the thickness of the silicon dioxide will always be thinner than the silicon wafer.

explanation:

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