g An oxidized silicon (111) wafer has an initial field oxide thickness of d0. Wet oxidation at 950 °C is then used to grow a thin film gate of 500 nm in 50 minutes. What is the original field oxide thickness d0 (in nm)?

Explanation:

From the information given:

oxidation of oxidized solution takes place at 950° C

For wet oxidation:

The linear and parabolic coefficient can be computed as:

Using and values obtained from the graph:

Thus;

So, the initial time required to grow oxidation is expressed as:

∴

NOW;

Thus; since we will consider the positive sign, the initial thickness is ;

≅ 0.261 μm

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